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Trapped Ion Quantum Computing

Optimization of the sensitivity of a temperature sensor based on germanium-vacancy color center (GeV) in diamond

arXiv
Authors: I. S. Cojocaru, V. V. Soshenko, S. V. Bolshedvorskii, V. A. Davydov, L. F. Kulikova, V. N. Agafonov, A. Chernyavskiy, A. N. Smolyaninov, V. N. Sorokin, S. Ya. Kilin, A. V. Akimov

Year

2024

Paper ID

38346

Status

Preprint

Abstract Read

~2 min

Abstract Words

148

Citations

N/A

Abstract

Temperature sensors based on the GeV color center in diamond are gaining considerable attention in both scientific and industrial fields. For widespread industrial adoption, however, these sensors need a design that is as simple and cost-effective as possible. The original sensor design relied on measuring the spectral characteristics of the zero-phonon line. Recently, a modified approach was introduced, which involves splitting the GeV emission with a dichroic mirror and determining temperature based on the ratio of the two resulting signals. In this analysis, we provide a detailed comparison of both methods. At room temperature, the two methods show comparable performance, with slight variations depending on component quality. However, at temperatures around 300 °C, the new method's performance is estimated to be nearly twice that of the original, provided optimal filter parameters are used. Additionally, the sensitivity of the new method remains roughly consistent with its performance at room temperature.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Temperature sensors based on the GeV color center in diamond are gaining considerable attention in both scientific and industrial fields.

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