Quick Navigation

Topics

Trapped Ion Quantum Computing

A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

arXiv
Authors: Paul Steinacker, Nard Dumoulin Stuyck, Wee Han Lim, Tuomo Tanttu, MengKe Feng, Andreas Nickl, Santiago Serrano, Marco Candido, Jesus D. Cifuentes, Fay E. Hudson, Kok Wai Chan, Stefan Kubicek, Julien Jussot, Yann Canvel, Sofie Beyne, Yosuke Shimura, Roger Loo, Clement Godfrin, Bart Raes, Sylvain Baudot, Danny Wan, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Christopher C. Escott, Kristiaan De Greve, Andrew S. Dzurak

Year

2024

Paper ID

37887

Status

Preprint

Abstract Read

~2 min

Abstract Words

150

Citations

N/A

Abstract

Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to T2* = 30.4 μs, T2Hahn = 803 μs, and T1 = 6.3 s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially...

Paper Tools

Become a member to use research tools

Sign in to open papers, visit source links, share, cite, compare, copy DOI links, request category corrections, and build your reading list.

Show Paper arXiv Publisher Share Cite This Paper Copy URL Compare Copy DOI Add to Reading List Category Correction Request

References & Citation Signals

Local Citation Graph (Related-Paper Links)

Current Paper #37887

External citation index: OpenAlex citation signal

Community Reactions

Quick sentiment from readers on this paper.

Score: 0
Likes: 0 Dislikes: 0

Sign in to react to this paper.

Discussion & Reviews (Moderated)

Average Rating: 0.0 / 5 (0 ratings)

No written reviews yet.