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Trapped Ion Quantum Computing

Comparing the performance of practical two-qubit gates for individual 171Yb ions in yttrium orthovanadate

arXiv
Authors: Mahsa Karimi, Faezeh Kimiaee Asadi, Stephen C. Wein, Christoph Simon

Year

2024

Paper ID

37416

Status

Preprint

Abstract Read

~2 min

Abstract Words

201

Citations

N/A

Abstract

In this paper, we investigate three schemes for implementing Controlled-Z (CZ) gates between individual ytterbium (Yb) rare-earth ions doped into yttrium orthovanadate YVO$4$ or YVO. Specifically, we investigate the CZ gates based on magnetic dipolar interactions between Yb ions, photon scattering off a cavity, and a photon interference-based protocol, with and without an optical cavity. We introduce a theoretical framework for precise computations of state and gate infidelities, accounting for noise effects. We then compute the state fidelity for each scheme to evaluate the feasibility of their experimental implementation. Based on these results, we compare the performance of the two-qubit gate schemes and discuss their respective advantages and disadvantages. We conclude that the probabilistic photon interference-based scheme offers the best fidelity scaling with cooperativity and is superior with the current technology of Yb values, while photon scattering is nearly deterministic but slower with less favourable fidelity scaling as a function of cooperativity. The cavityless magnetic dipolar scheme provides a fast, deterministic gate with decent fidelities if close ion localization can be realized. While focusing on 171Yb3+: YVO system as a case study, the theoretical tools and approaches developed in this work are broadly applicable to other spin qubit systems.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • In this paper, we investigate three schemes for implementing Controlled-Z (CZ) gates between individual ytterbium (Yb) rare-earth ions doped into yttrium orthovanadate YVO4 or YVO.

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