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Spin Qubits Silicon Quantum Computing Quantum Chemistry

Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

arXiv
Authors: K. Imakire, A. Oiwa, Y. Tokura

Year

2024

Paper ID

37317

Status

Preprint

Abstract Read

~2 min

Abstract Words

93

Citations

N/A

Abstract

For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions.

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  • For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a...

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2411.01148 [2] arXiv https://arxiv.org/abs/2411.01148 [3] Publisher https://arxiv.org/abs/2411.01148

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