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Trapped Ion Quantum Computing

Electrically Tuneable Variability in Germanium Hole Spin Qubits

arXiv
Authors: Edmondo Valvo, Michele Jakob, Patrick Del Vecchio, Maximilian Rimbach-Russ, Stefano Bosco

Year

2025

Paper ID

36566

Status

Preprint

Abstract Read

~2 min

Abstract Words

155

Citations

N/A

Abstract

Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing. However, their current performance is mostly limited by large dot-to-dot variability that leads to uncontrolled qubit energies and random tilts in the spin quantization axis. Here, we propose a systematic and local method to engineer the spin qubit response by imprinting a controlled anisotropy in the quantum dot confinement, enabling on-demand electric g-tensor control. In particular, we find that both the quantum-dot size and asymmetry allow electrical tuning of the g-tensor and significantly suppress magnitude and angular variability of the spin response for selected magnetic field directions. We confirm this behavior by analyzing single-disorder realizations and statistical ensembles in state-of-the-art strained and unstrained germanium channels, showing that the latter provides an optimal path for g-tensor engineering. Our results provide practical design principles for on-demand control of the spin response and mitigating variability, paving the way towards large-scale germanium-based quantum computers.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2025 reference point for readers tracking recent quantum research.
  • Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing.

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