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Trapped Ion Quantum Computing

Localization and coherent control of 25 nuclear spins in Silicon Carbide

arXiv
Authors: Pierre Kuna, Erik Hesselmeier-Hüttmann, Phillip Schillinger, Felix Gloistein, István Takács, Viktor Ivády, Wolfgang Knolle, Jawad Ul-Hassan, Jörg Wrachtrup, Vadim Vorobyov

Year

2025

Paper ID

36328

Status

Preprint

Abstract Read

~2 min

Abstract Words

135

Citations

N/A

Abstract

Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quantum memories and local qubits registers. To fully leverage this potential precise characterization of the surrounding nuclear-spin environment augmented with refined DFT models is required. In this work, we report angstrom-level 3D localization of 25 nuclear spins around a single V2 center in 4H Silicon Carbide. Utilizing specially placed robust nuclear memory as a highly efficient readout ancilla for readout, we apply correlation based spectroscopy and by selecting multi-spin chains up to length four, we access and characterize extended nuclear spin cluster. Using the coupling map we reconstruct their couplings to the central electron spin and neighboring nuclei. This work paves the way towards advanced quantum register applications on Silicon Carbide platform.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2025 reference point for readers tracking recent quantum research.
  • Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network.

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