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Trapped Ion Quantum Computing

Capacity-time Trade-off in Highly Reliable Quantum Memory

arXiv
Authors: Miao-Miao Yi, L. X. Cui, Y -M Du, C. P. Sun

Year

2025

Paper ID

36074

Status

Preprint

Abstract Read

~2 min

Abstract Words

138

Citations

N/A

Abstract

Reliable optical quantum memory is limited by real-world imperfections such as disordered coupling and detuning. Existing studies mostly address these factors separately, while in practice their correlated effects set a fundamental limit on storage performance. We develop a comprehensive model that simultaneously incorporates disordered coupling and detuning. It is shown that these disorders induce a random Berry's phase in the stored states, while decoherence from disordered coupling stems from correlations with detuning rather than individual imperfections. This mechanism imposes a fundamental trade-off among storage capacity, storage time, and driving time, setting a universal limit for reliable storage. Extending the analysis to memory based devices operating with multiple storage processes shows that enhancing parameter independence improves their reliability. We further provide a more precise relation for measuring and correcting global detuning, which is directly relevant to current experimental protocols.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2025 reference point for readers tracking recent quantum research.
  • Reliable optical quantum memory is limited by real-world imperfections such as disordered coupling and detuning.

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