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III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

DOAJ
Authors: M. Razeghi

Year

2011

Paper ID

35566

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

77

Citations

86

Abstract

We review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AlGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light-emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AlGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in III-Nitride optoelectronic devices.

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  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
  • It adds a 2011 reference point for readers tracking recent quantum research.
  • We review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs.

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References & Citation Signals

[1] DOI https://doi.org/10.1109/JPHOT.2011.2135340 [2] Publisher https://ieeexplore.ieee.org/document/5772683/

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