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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
DOAJ
Authors: Cao Q, Yoon SF, Liu CY, Ngo CY
Year
2007
Paper ID
35405
Status
Peer-reviewed
Abstract Read
~2 min
Abstract Words
124
Citations
N/A
Abstract
<p>Abstract</p><p>Ten-layer InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm<sup>2</sup>) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm<sup>2</sup>) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.</p>
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