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Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

arXiv
Authors: Lei Zhang, Chu-Hsiang Teng, Tyler A. Hill, Leung-Kway Lee, Pei-Cheng Ku, Hui Deng

Year

2013

Paper ID

33042

Status

Preprint

Abstract Read

~2 min

Abstract Words

99

Citations

N/A

Abstract

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.

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  • This paper contributes to the Photonic Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2013 reference point for readers tracking recent quantum research.
  • Single photon emission was observed from site-controlled InGaN/GaN quantum dots.

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