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Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode

arXiv
Authors: Mario Stipčević, Daqing Wang, Rupert Ursin

Year

2013

Paper ID

32010

Status

Preprint

Abstract Read

~2 min

Abstract Words

93

Citations

N/A

Abstract

We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps FWHM are the main distinguishing characteristics of this SPAD.

Why This Paper Matters

  • It adds a 2013 reference point for readers tracking recent quantum research.
  • We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components.

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