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Trapped Ion Quantum Computing
Optical quantum memory for polarization qubits with V-type three-level atoms
arXiv
Authors: D. Viscor, A. Ferraro, Yu. Loiko, R. Corbalán, J. Mompart, V. Ahufinger
Year
2011
Paper ID
30998
Status
Preprint
Abstract Read
~2 min
Abstract Words
125
Citations
N/A
Abstract
We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening (CRIB) technique. We theoretically show the possibility to store and retrieve a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit - a single photon in an arbitrary polarization state - without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analyzed.
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- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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- We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening (CRIB) technique.
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