Quick Navigation
Topics
Spin Qubits Silicon Quantum Computing
Carrier Excitation Energies from a QD to OCL, RMS of Relative QD-Size Fluctuations and Temperature Dependence of QDL
DOAJ
Authors: R. M. Hassan
Year
2019
Paper ID
30323
Status
Peer-reviewed
Abstract Read
~2 min
Abstract Words
70
Citations
N/A
Abstract
In this work, we study the characteristic temperature of a quantum dot laser (QDL) inpresence of internal optical loss and quantum efficiency. The control parameters (the constantcomponent of internal loss coefficient, effective cross section, carrier excitation energies froma QD to the optical confinement layer (OCL), and the root mean square (RMS) of relativeQD-size fluctuations) are used for achieving free carrier density in the OCL and thresholdcurrent density and its component.
Why This Paper Matters
- This paper contributes to the Spin Qubits & Silicon Quantum Computing research area in the Quantum Articles archive.
- It adds a 2019 reference point for readers tracking recent quantum research.
- In this work, we study the characteristic temperature of a quantum dot laser (QDL) inpresence of internal optical loss and quantum efficiency.
Paper Tools
Become a member to use research tools
Sign in to open papers, visit source links, share, cite, compare, copy DOI links, request category corrections, and build your reading list.
Publisher Share
Cite This Paper
Copy URL
Compare
Copy DOI Add to Reading List
Category Correction Request
Category Correction Request
Help us improve classification quality by proposing a better category. Every request is reviewed by an admin.
Sign in to submit a category correction request for this paper.
Log In to SubmitReferences & Citation Signals
Community Reactions
Quick sentiment from readers on this paper.
Score:
0
Likes: 0
Dislikes: 0
Sign in to react to this paper.
Discussion & Reviews (Moderated)
Average Rating: 0.0 / 5 (0 ratings)
No written reviews yet.