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Trapped Ion Quantum Computing

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

arXiv
Authors: Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Colinge, Jean-Pierre Raskin

Year

2011

Paper ID

29718

Status

Preprint

Abstract Read

~2 min

Abstract Words

76

Citations

N/A

Abstract

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2011 reference point for readers tracking recent quantum research.
  • We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge).

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References & Citation Signals

[1] DOI https://doi.org/arXiv:1111.3683 [2] arXiv https://arxiv.org/abs/1111.3683 [3] Publisher https://arxiv.org/abs/1111.3683

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