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Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers
arXiv
Authors: B. Gunnar Malm, Mohammadreza Kolahdouz, Fredrik Forsberg, Frank Niklaus
Year
2011
Paper ID
29303
Status
Preprint
Abstract Read
~2 min
Abstract Words
65
Citations
N/A
Abstract
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors
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- This paper contributes to the Quantum Machine Learning research area in the Quantum Articles archive.
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- The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation.
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