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Trapped Ion Quantum Computing

Vertical ion transport in a surface Paul trap: escalator and elevator approaches

arXiv
Authors: Alexey Russkikh, Nikita Zhadnov

Year

2026

Paper ID

28706

Status

Preprint

Abstract Read

~2 min

Abstract Words

149

Citations

N/A

Abstract

Surface ion traps confining and manipulating tens of ion qubits have become the leading platform for quantum processors with high quantum volume. These devices employ the Quantum Charge-Coupled Device (QCCD) architecture, wherein multiple trapping zones are linked by an on-chip transport network that shuttles ion chains, enabling full connectivity through physical ion transport in a plane parallel to the chip surface. The ability to move ions perpendicular to this plane can offer additional advantages, including tuning the laser-ion interaction strength, systematic studies of surface-induced heating mechanisms, and precise alignment with a mode of an external optical cavity. We introduce an "escalator" - a geometrically optimized transition between trapping zones of different confinement heights - and present a comparative analysis of two "elevator" configurations that reposition the RF null dynamically via additional electrode voltages. Both approaches enable nearly a twofold change in the ion confinement height above the chip surface.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • Surface ion traps confining and manipulating tens of ion qubits have become the leading platform for quantum processors with high quantum volume.

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