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Trapped Ion Quantum Computing

Demonstration of High-Fidelity Gates in a Strongly Anharmonic with Long-Coherence C-Shunt Flux Qubit

arXiv
Authors: Silu Zhao, Li Li, Weiping Yuan, Xinhui Ruan, Jinzhe Wang, Bingjie Chen, Yunhao Shi, Guihan Liang, Shi Xiao, Jiacheng Song, Jinming Guo, Xiaohui Song, Kai Xu, Heng Fan, Zhongcheng Xiang, Dongning Zheng

Year

2026

Paper ID

28415

Status

Preprint

Abstract Read

~2 min

Abstract Words

81

Citations

N/A

Abstract

We demonstrate high-fidelity single-qubit gates on a C-shunt flux qubit that simultaneously combines a large anharmonicity $mathcal{A}/2π=848 MHz$ with long relaxation time $T1 = 23 μs$. The large anharmonicity significantly suppresses leakage to higher energy levels, enabling fast and precise microwave control. Using DRAG pulses and randomized benchmarking, the qubit achieves gate fidelities exceeding 99.9%, highlighting the capability of C-shunt flux qubits for robust and high-performance quantum operations. These results establish them as a promising platform for scalable quantum information processing.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2026 reference point for readers tracking recent quantum research.
  • We demonstrate high-fidelity single-qubit gates on a C-shunt flux qubit that simultaneously combines a large anharmonicity mathcalA/2π=848 MHz with long relaxation time T1 = 23 μs.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2603.11692 [2] arXiv https://arxiv.org/abs/2603.11692 [3] Publisher https://arxiv.org/abs/2603.11692

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