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Spin Qubits Silicon Quantum Computing Quantum Chemistry

Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells

arXiv
Authors: V. V. Belykh, M. V. Kochiev

Year

2015

Paper ID

27908

Status

Preprint

Abstract Read

~2 min

Abstract Words

96

Citations

N/A

Abstract

A comprehensive experimental investigation of exciton and biexciton recombination in GaAs/AlGaAs quantum wells is presented. Exciton and biexciton recombination times are found to be 16 and 55 ps, respectively. A method of determining the dynamics of the exciton temperature is developed. It is shown that both exciton and biexciton recombination processes increase the exciton temperature by an amount as high as sim 10 K. These processes impose a new restriction on the possibility of exciton Bose-Einstein condensation and make impossible its achievement in a system of direct excitons in GaAs quantum wells even for resonantly excited exciton gas.

Why This Paper Matters

  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
  • It adds a 2015 reference point for readers tracking recent quantum research.
  • A comprehensive experimental investigation of exciton and biexciton recombination in GaAs/AlGaAs quantum wells is presented.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:1507.07671 [2] arXiv https://arxiv.org/abs/1507.07671 [3] Publisher https://arxiv.org/abs/1507.07671

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