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Trapped Ion Quantum Computing

Mechanically induced two-qubit gates and maximally entangled states for single electron spins in a carbon nanotube

arXiv
Authors: Heng Wang, Guido Burkard

Year

2015

Paper ID

27876

Status

Preprint

Abstract Read

~2 min

Abstract Words

121

Citations

N/A

Abstract

We theoretically analyze a system where two electrons are trapped separately in two quantum dots on a suspended carbon nanotube (CNT), subject to external ac electric driving. An indirect mechanically-induced coupling of two distant single electron spins is induced by the interaction between the spins and the mechanical motion of the CNT. We show that a two-qubit iSWAP gate and arbitrary single-qubit gates can be obtained from the intrinsic spin-orbit coupling. Combining the iSWAP gate and single-qubit gates, maximally entangled states of two spins can be generated in a single step by varying the frequency and the strength of the external electric driving field. The spin-phonon coupling can be turned off by electrostatically shifting the electron wave function on the nanotube.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • We theoretically analyze a system where two electrons are trapped separately in two quantum dots on a suspended carbon nanotube (CNT), subject to external ac electric driving.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:1508.02107 [2] arXiv https://arxiv.org/abs/1508.02107 [3] Publisher https://arxiv.org/abs/1508.02107

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