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Trapped Ion Quantum Computing
Quantum Simulation
Variational Gibbs State Preparation on Trapped-Ion Devices
arXiv
Authors: Reece Robertson, Mirko Consiglio, Josey Stevens, Emery Doucet, Tony J. G. Apollaro, Sebastian Deffner
Year
2026
Paper ID
25854
Status
Preprint
Abstract Read
~2 min
Abstract Words
133
Citations
N/A
Abstract
We implement a variational quantum algorithm for Gibbs state preparation of a transverse-field Ising model on IonQ's quantum computers. To this end, we train the variational parameters via classical simulation and perform state tomography on the quantum devices to evaluate the fidelity of the prepared Gibbs state. As a main result, we find that fidelity decreases (non-monotonically) as a function of the inverse temperature β of the system. Fidelity also decreases as a function of the size of the system. Interestingly, we find that a Gibbs state prepared for a specified β is a better representative of a Gibbs state prepared for a textit{lower} β; or in other words, thermal fluctuations in the quantum hardware lead to digital heating, that is, an increase in the temperature of the prepared Gibbs state above what was intended.
Why This Paper Matters
- This paper contributes to the Quantum Simulation research area in the Quantum Articles archive.
- It adds a 2026 reference point for readers tracking recent quantum research.
- We implement a variational quantum algorithm for Gibbs state preparation of a transverse-field Ising model on IonQ's quantum computers.
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