Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon

Abstract T center defects in silicon provide an attractive platform for quantum technologies due to their unique spin properties and compatibility with mature silicon technologies. We investigate several gate protocols between single T centers, including two probabilistic photon interference-based schemes, a near-deterministic photon scattering gate, and a deterministic magnetic dipole-based scheme. In particular, we study a photon interference-based scheme with feedback which can achieve success probabilities above 50%, and use the photon-count decomposition method to perform the first analytical calculations of its entanglement fidelity and efficiency while accounting for imperfections. We also calculate the fidelity and efficiency of the other schemes. Finally, we compare the performance of all the schemes, considering current and near-future experimental capabilities. In particular, we find that the photon interference-based scheme with feedback has the potential to achieve competitive efficiency and fidelity, making it interesting to explore experimentally.