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4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays

DOAJ
Authors: Tatsuya Meguro, Masayuki Tsutsumi, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki

Year

2024

Paper ID

25360

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

77

Citations

2

Abstract

For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and an optical lens, and SiC 64 pixel CIS with 3T-/4T-APS arrays were developed.

Why This Paper Matters

  • This paper contributes to the Superconducting Qubits research area in the Quantum Articles archive.
  • It adds a 2024 reference point for readers tracking recent quantum research.
  • For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated.

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References & Citation Signals

[1] DOI https://doi.org/10.35848/1882-0786/ad665f [2] Publisher https://doi.org/10.35848/1882-0786/ad665f

Local Citation Graph (Related-Paper Links)

Current Paper #25360 #68470 A fluxonium qubit-based hybrid ... #68454 Magnon-mediated microwave to op... #68449 Scale-Invariant Open Quantum Sy... #68437 Transition-state lattice modes ...

External citation index: OpenAlex citation signal • updated 2026-06-11 08:03:34

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