Low Loss Multi-Layer Wiring for Superconducting Microwave Devices

Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor (CMOS) processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here we demonstrate a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We separate and support multiple wiring layers throughout fabrication using SiO₂ scaffolding, then remove it post-fabrication. This technique is compatible with foundry level processing and the can be generalized to make many different forms of low-loss multi-layer wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of sim 3.9 times 10^-8 per bridge, which is 100 times lower than dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fuxmon qubits. We measure qubit characteristic lifetimes $T₁$'s in excess of 30 μs in gmon devices.