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Trapped Ion Quantum Computing

CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor

arXiv
Authors: Donggyu Kim, Mohamed I. Ibrahim, Christopher Foy, Matthew E. Trusheim, Ruonan Han, Dirk R. Englund

Year

2018

Paper ID

24301

Status

Preprint

Abstract Read

~2 min

Abstract Words

99

Citations

N/A

Abstract

The nitrogen vacancy (NV) center in diamond has emerged as a leading solid-state quantum sensor for applications including magnetometry, electrometry, thermometry, and chemical sensing. However, an outstanding challenge for practical applications is that existing NV-based sensing techniques require bulky and discrete instruments for spin control and detection. Here, we address this challenge by integrating NV based quantum sensing with complementary metal-oxide-semiconductor (CMOS) technology. Through tailored CMOS-integrated microwave generation and photodetection, this work dramatically reduces the instrumentation footprint for quantum magnetometry and thermometry. This hybrid diamond-CMOS integration enables an ultra-compact and scalable platform for quantum sensing and quantum information processing.

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • The nitrogen vacancy (NV) center in diamond has emerged as a leading solid-state quantum sensor for applications including magnetometry, electrometry, thermometry, and chemical...

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