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Trapped Ion Quantum Computing
Quantum Sensing of Spin Transport Properties of an Antiferromagnetic Insulator
arXiv
Authors: Hailong Wang, Shu Zhang, Nathan J. McLaughlin, Benedetta Flebus, Mengqi Huang, Yuxuan Xiao, Eric E. Fullerton, Yaroslav Tserkovnyak, Chunhui Rita Du
Year
2020
Paper ID
19481
Status
Preprint
Abstract Read
~2 min
Abstract Words
149
Citations
N/A
Abstract
Antiferromagnetic insulators (AFIs) are of significant interest due to their potential to develop next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a non-invasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe2O3 via nitrogen-vacancy (NV) quantum spin sensors. By NV relaxometry measurements, we successfully detect the time-dependent fluctuations of the longitudinal spin density of α-Fe2O3. The observed frequency dependence of the NV relaxation rate is in agreement with a theoretical model, from which an intrinsic spin diffusion constant of α-Fe2O3 is experimentally measured in the absence of external spin biases. Our results highlight the significant opportunity offered by NV centers in diagnosing the underlying spin transport properties in a broad range of high-frequency magnetic materials, which are challenging to access by more conventional measurement techniques.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2020 reference point for readers tracking recent quantum research.
- Antiferromagnetic insulators (AFIs) are of significant interest due to their potential to develop next-generation spintronic devices.
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