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Trapped Ion Quantum Computing Quantum Simulation

Phase randomness in a gain-switched semiconductor laser: stochastic differential equation analysis

arXiv

Authors: Roman Shakhovoy, Alexander Tumachek, Natalia Andronova, Yury Mironov, Yury Kurochkin

Year

2020

Paper ID

19128

Status

Preprint

Abstract Read

~2 min

Abstract Words

114

Citations

N/A

Abstract

We performed theoretical analysis of the phase randomness in a gain-switched semiconductor laser in the context of its application as a quantum entropy source. Numerical simulations demonstrate that phase diffusion r.m.s. exhibits non-linear dependence on the bias current, which could be of significant practical importance, particularly, in application to high-speed optical quantum random number generators. It is shown that phase diffusion between laser pulses cannot always be assumed to exhibit required efficiency, particularly, at high pulse repetition rates. It was also revealed that the gain saturation significantly affects the r.m.s. value of the phase diffusion and, in essence, determines the degree of non-linearity of its dependence on the pump current.

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We performed theoretical analysis of the phase randomness in a gain-switched semiconductor laser in the context of its application as a quantum entropy source.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2011.10401 [2] arXiv https://arxiv.org/abs/2011.10401 [3] Publisher https://arxiv.org/abs/2011.10401

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