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In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching

DOAJ
Authors: Can Cao, Sheikh Ifatur Rahman, Chris Chae, Jinwoo Hwang, Chandan Joishi, Siddharth Rajan, Wu Lu

Year

2025

Paper ID

18016

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

100

Citations

1

Abstract

We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm. The interfacial resistance between the regrown n ^+ GaN and the 2DEG at AlN/GaN interface is 0.058 Ω·mm, close to the theoretical quantum conductance limit. The fabricated devices with a gate length of 0.7 μm exhibit a maximum current density of 1.57 A mm ^−1 and on-resistance of 1.85 Ω·mm at a gate bias of 1 V.

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  • We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable...

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References & Citation Signals

[1] DOI https://doi.org/10.35848/1882-0786/adb09b [2] Publisher https://doi.org/10.35848/1882-0786/adb09b

Local Citation Graph (Related-Paper Links)

Current Paper #18016 #68465 Bounding Eigenstate Overlap fro... #68440 Classical State Preparation for... #68437 Transition-state lattice modes ... #68423 Selective Fermi-Level Pinning: ...

External citation index: OpenAlex citation signal • updated 2026-06-11 19:59:00

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