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Trapped Ion Quantum Computing
Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Centre
arXiv
Authors: Moein Kazemi, Mehdi Keshavarz, Mark E. Turiansky, John L. Lyons, Nikolay V. Abrosimov, Stephanie Simmons, Daniel B. Higginbottom, Mike L. W. Thewalt
Year
2025
Paper ID
18002
Status
Preprint
Abstract Read
~2 min
Abstract Words
102
Citations
N/A
Abstract
Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T centre, a telecommunications-band emitter in silicon, and find a strong isotope dependence of its excited-state lifetime. In particular, the lifetime of the deuterium T centre is over five times longer than the common protium variant. Through explicit first-principles calculations, we demonstrate that this dramatic difference is due to a reduction in the carbon-hydrogen local vibrational mode energy, which suppresses non-radiative decay. Our results imply that the deuterium T centre approaches unit quantum efficiency, enabling more efficient single-photon sources, quantum memories, and entanglement generation.
Why This Paper Matters
- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
- It adds a 2025 reference point for readers tracking recent quantum research.
- Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers.
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