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Trapped Ion Quantum Computing
Modification of Hanle and polarization recovery curves under interplay of hopping and quantum measurement back action
arXiv
Authors: A. L. Zibinskiy, D. S. Smirnov
Year
2025
Paper ID
17198
Status
Preprint
Abstract Read
~2 min
Abstract Words
104
Citations
N/A
Abstract
The measurements of Hanle and polarization recovery effects for localized charge carriers are the basic tools for determining parameters of the spin dynamics, such as strength of the hyperfine interaction, for example, in quantum dots. We describe the dependence of the spin polarization of localized electrons on transverse and longitudinal magnetic fields taking into account the interplay between electron hopping and measurement back action. We show that these two have a qualitatively similar effect in the Faraday geometry, but compete in the Voigt geometry. This allows one to describe a broad range of the experimental results and study the fundamental effects of quantum measurements.
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- The measurements of Hanle and polarization recovery effects for localized charge carriers are the basic tools for determining parameters of the spin dynamics, such as strength...
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