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In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales

arXiv
Authors: Vijay Kumar, Martin Siegele-Brown, Matthew Aylett, Sebastian Weidt, Winfried Karl Hensinger

Year

2025

Paper ID

17185

Status

Preprint

Abstract Read

~2 min

Abstract Words

85

Citations

N/A

Abstract

We investigate the surface flashover voltage threshold for SiO2, SiN, and AlN thin films over micrometre scale lengths. Furthermore, we test the effects of different etching chemistries on SiO2 layers. We find that there is little significant difference between untreated SiO2 samples and those that have been etched with hydrogen fluoride or Transene AlPad Etch 639. SiN and AlN samples performed significantly better than all SiO2 samples giving a 45% increase in surface flashover voltage at a distance of 5 μm with the difference increasing with electrode spacing.

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  • This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
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  • We investigate the surface flashover voltage threshold for SiO2, SiN, and AlN thin films over micrometre scale lengths.

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References & Citation Signals

[1] DOI https://doi.org/arXiv:2511.10528 [2] arXiv https://arxiv.org/abs/2511.10528 [3] Publisher https://arxiv.org/abs/2511.10528

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