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Trapped Ion Quantum Computing

Edge states of a Bi2Se3 nanosheet in a perpendicular magnetic field

arXiv
Authors: Stan P. J. Koenis, Lucas Maisel LicerĂ¡n, Henk T. C. Stoof

Year

2025

Paper ID

15828

Status

Preprint

Abstract Read

~2 min

Abstract Words

125

Citations

N/A

Abstract

Conventional wisdom dictates that the conducting edge states of two-dimensional topological insulators of the Bi2Se3 family are protected by time-reversal symmetry. However, theoretical bulk calculations and a recent experiment show that the edge states persist in the presence of large external magnetic fields. To address this apparent contradiction, we have developed an analytical description for the edge-state wave function of a semi-infinite sample in a perpendicular magnetic field. Our description relies on the usual bulk Landau levels, together with additional states arising due to the presence of the hard wall, which are unnormalizable in the infinite system. The analytical wave functions agree extremely well with numerical calculations and can be used to directly analyze the behavior of the edge states in a magnetic field.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2025 reference point for readers tracking recent quantum research.
  • Conventional wisdom dictates that the conducting edge states of two-dimensional topological insulators of the Bi2Se3 family are protected by time-reversal symmetry.

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