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Trapped Ion Quantum Computing
Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures
arXiv
Authors: Bishnu Patra, Mohammadreza Mehrpoo, Andrea Ruffino, Fabio Sebastiano, Edoardo Charbon, Masoud Babaie
Year
2019
Paper ID
14438
Status
Preprint
Abstract Read
~2 min
Abstract Words
87
Citations
N/A
Abstract
This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperature (4.2 K). The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters and the resulting insights on modeling of passives at cryogenic temperatures are provided. Both characterization and modeling, reported for the first time down to 4.2 K, are essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.
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- This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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- This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic...
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