Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in Si MOS transistorlike devices eases future industrial-scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radio-frequency reflectometry only requires the already existing transistor gates to read a quantum dot state, which alleviates the need for additional elements. In this effort toward scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below that of typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3-GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in Si MOS multigate devices, with SNR enhanced due to a Josephson traveling-wave parametric amplifier (JTWPA). The broad tunable 2-GHz amplification bandwidth combined with more than 10-dB ON-OFF SNR improvement of the JTWPA enables frequency and time-division-multiplexed readout of interdot transitions, and noise performance consistent with JTWPA characteristics at higher frequencies. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performance up to a magnetic field of 1.1 T at the quantum dot device, compatible with standard Si MOS spin-qubit experiments.