Recent Advances in Enhancing the Stability of CsPbI ₃ Perovskite Quantum Dots for Light‐Emitting Diodes

ABSTRACT CsPbI 3 quantum dots (QDs) have attracted considerable attention as promising candidates for light‐emitting diode (LED) applications. However, their intrinsic tendency to undergo a spontaneous phase transition to a nonperovskite structure significantly hampers their practical deployment. Considerable efforts have been devoted to stabilizing the perovskite phase of CsPbI 3 and improving the efficiency of LEDs. This review provides a comprehensive overview of the fundamental factors governing CsPbI 3 instability, encompassing both intrinsic structural characteristics and external environmental influences, and critically evaluates recent strategies developed to improve phase stability and device performance. Approaches discussed include (1) size confinement, (2) ionic doping, (3) surface passivation and termination, and (4) encapsulation. Finally, we provide a brief outlook on the ongoing challenges, and outline potential avenues for future advancement of CsPbI 3 QDs in optoelectronic applications.