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Magneto-optical properties of the neutral silicon-vacancy center in diamond under extreme isotropic strain fields
arXiv
Authors: Meysam Mohseni, Gergő Thiering, Adam Gali
Year
2026
Paper ID
136
Status
Preprint
Abstract Read
~2 min
Abstract Words
212
Citations
N/A
Abstract
The neutral silicon--vacancy SiV$0$ center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields. Using first-principles density-functional theory, we quantify its response to isotropic strain spanning strong compression and tensile regimes (effective hydrostatic pressures of approximately -80 to 180 GPa). The coexistence of doubly degenerate eg and eu levels produces a structural instability captured by a quadratic product Jahn--Teller model. Under isotropic compression, the zero-phonon line blue-shifts nearly linearly while the Eg phonon stiffens, suppressing vibronic instabilities and reducing Jahn--Teller quenching. Consequently, the Ham-reduced excited-state spin--orbit splitting increases substantially and the dark--bright vibronic gap widens. In contrast, isotropic tensile strain enhances vibronic effects and induces symmetry breaking beyond a critical strain, with tunneling-mediated dynamical averaging at the onset. Throughout the symmetry-preserving regime, parity remains well defined, so isotropic strain alone does not activate the dark transition. Charge-transition levels indicate photostability of the emission deep into the compressive regime, and near the highest photostable deformation $sim 100$ GPa, the radiative lifetime increases due to a reduced transition dipole moment despite the increasing optical energy. These trends yield compact calibration relations linking optical and spin observables to isotropic strain and establish SiV0 as a symmetry-protected, strain-tunable quantum emitter operating into the multi-megabar-equivalent regime.
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- This paper contributes to the Quantum Control & Pulse Engineering research area in the Quantum Articles archive.
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- The neutral silicon--vacancy SiV^0 center in diamond combines inversion symmetry with optical emission, making it a robust quantum emitter resilient to stray electric fields.
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