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Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation

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Authors: V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, O.B. Okhrimenko, Yu.Yu. Bacherikov, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, O.F. Kolomys, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, V.V. Strelchuk, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, R.V. Konakova, V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine

Year

2022

Paper ID

13579

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

80

Citations

4

Abstract

In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.

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  • In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and...

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References & Citation Signals

[1] DOI https://doi.org/10.15407/spqeo25.04.355 [2] Publisher https://doi.org/10.15407/spqeo25.04.355

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External citation index: OpenAlex citation signal • updated 2026-10-21 22:52:18

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