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Quantum Chemistry

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111).

PubMed
Authors: Yeh V V, Berbil-Bautista L, Wang CZ, Ho KM, Tringides MC

Year

2000

Paper ID

13291

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

116

Citations

152

Abstract

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.

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  • Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete...

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References & Citation Signals

[1] DOI https://doi.org/10.1103/PhysRevLett.85.5158 [2] Publisher https://pubmed.ncbi.nlm.nih.gov/11102210/

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