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Trapped Ion Quantum Computing

Laser action of trions in a semiconductor quantum well.

PubMed
Authors: Puls J, Mikhailov GV, Henneberger F, Yakovlev DR, Waag A, Faschinger W

Year

2002

Paper ID

13044

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

100

Citations

24

Abstract

We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells. Specifically, the (stimulated) emission-absorption net rate of this transition is controlled by the difference of trion and electron occupation in momentum space. As the mass of the trion is larger than that of the electron, gain occurs on the low-energy side of the line center without degeneracy and inversion in the total particle numbers. The scenario is reminiscent of a three-level system. At higher injection levels, carrier heating sets on and limits the available gain to values of about 10(4) cm(-1).

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  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
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  • We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells.

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References & Citation Signals

[1] DOI https://doi.org/10.1103/PhysRevLett.89.287402 [2] Publisher https://pubmed.ncbi.nlm.nih.gov/12513179/

Local Citation Graph (Related-Paper Links)

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External citation index: OpenAlex citation signal • updated 2026-06-13 11:22:58

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