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Open Quantum Systems Decoherence
Two-spin relaxation of P-dimers in Silicon
arXiv
Authors: Massoud Borhani, Xuedong Hu
Year
2010
Paper ID
10952
Status
Preprint
Abstract Read
~2 min
Abstract Words
98
Citations
N/A
Abstract
We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the triplet states. Within the Heitler-London and effective mass approximations, we calculate the triplet relaxation rates in the presence of an applied magnetic field. This relaxation mechanism affects the resonance peaks in current Electron Spin Resonance (ESR) experiments on P-dimers. Moreover, the estimated time scales for the spin decay put an upper bound on the gate pulses needed to perform fault-tolerant two-qubit operations in donor-spin-based quantum computers (QCs).
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- This paper contributes to the Open Quantum Systems & Decoherence research area in the Quantum Articles archive.
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- We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon.
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