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Quantum Chemistry
Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
arXiv
Authors: Xiulai Xu, Andrew C. Irvine, Yang Yang, Xitian Zhang, David A. Williams
Year
2010
Paper ID
10734
Status
Preprint
Abstract Read
~2 min
Abstract Words
79
Citations
N/A
Abstract
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.
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- This paper contributes to the Quantum Chemistry research area in the Quantum Articles archive.
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- We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors.
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