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Effect Of Weak Magnetic Field $sim $ 300 Gs On the Intensity of Terahertz Emission of Hot Electrons in n-Ge at Helium Temperatures
arXiv
Authors: V. M. Bondar, P. M. Tomchuk, G. A. Shepel'skii
Year
2010
Paper ID
10500
Status
Preprint
Abstract Read
~2 min
Abstract Words
117
Citations
N/A
Abstract
Experimental results of studying the effect of a weak magnetic field $sim $300 Gs on the intensity of the terahertz emission $λapprox $100 $μ$m of hot electrons in n-Ge (crystallographic orientation < 1,0,0 >) at helium temperatures $Tsim $5 K are presented and discussed. It is shown that the strong influence of this field (decrease of the emission intensity by 500÷1000{%}) is related to a decrease of the carrier concentration at weak electric fields and the appearance of the magnetoresistance at stronger fields. The longitudinal magnetoresistance becomes significant due to the anisotropy of the energy dispersion law of electrons and a strong deformation of the electron velocity distribution function by the electric field (which is beyond the framework of the diffusion approximation).
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- Experimental results of studying the effect of a weak magnetic field sim 300 Gs on the intensity of the terahertz emission λapprox 100 μm of hot electrons in n-Ge...
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