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Unveiling the plasmonic electron origin: dual vacancies synergy in an S-scheme Cu(7)S(4)@ZnIn(2)S(4) heterojunction boosting hot electron flow for photothermal H(2) evolution.
PubMed
Authors: Wu M, Chu B, Hu B, Zhang J, Yang W, Tian M
Year
2026
Paper ID
10298
Status
Peer-reviewed
Abstract Read
~2 min
Abstract Words
179
Citations
N/A
Abstract
The integration of plasmonic nanomaterials integrated with semiconductors broadens light absorption spectrum and excites abundant hot electrons via localized surface plasmon resonance (LSPR), offering a promising route to enhance photocatalytic hydrogen evolution. However, their underlying governing mechanisms remain largely unexplored. Herein, guided by theoretical calculations and simulations, an S-scheme CuS@ZnInS heterojunction incorporating Cu and S double vacancies was constructed. The as-synthesized CuS@ZnInS achieves a high hydrogen evolution rate of 47.41 mmol·g·h under photothermal conditions and a quantum efficiency of 52.6% at 500 nm. Finite-difference time-domain (FDTD) simulations and density functional theory (DFT) calculations demonstrate that the core-shell structure formed between sulfur vacancy-rich ZnInS and solid CuS enhances the local electromagnetic field, while the dual copper‑sulfur vacancies modulate the work function and reduce the H* adsorption barrier, respectively. Both in-situ irradiated X-ray photoelectron spectroscopy (ISIXPS) and femtosecond transient absorption spectroscopy (fs-TAS) confirmed that the vacancies and the S-scheme heterojunction synergistically promote efficient charge transfer at the interface. This work elucidates the origin of LSPR in copper-deficient semiconductors and provides a defect-interface coupling strategy for designing broad-spectrum, high-performance photocatalysts.
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- The integration of plasmonic nanomaterials integrated with semiconductors broadens light absorption spectrum and excites abundant hot electrons via localized surface plasmon...
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