Field-tunable charge confinement in III-V layered nanowire-array superlattices.

We present a theoretical framework for electric-field control of charge confinement and interwire tunneling in GaAs/AlGaAs layered nanowire-array superlattices. Using a two-electron effective mass model that incorporates screened Coulomb interaction and experimentally realistic confinement geometries, we investigate how transverse electric fields and structural design parameters enable tunable redistribution of charge carriers across vertically stacked quantum wires. Our results reveal a crossover from delocalized miniband-like states to strongly localized charge layers, driven by the interplay between quantum confinement, interwire coupling, and electrostatic potential gradients under dielectric screening. We further outline a feasible implementation based on the self-assembly of GaAs nanowire arrays grown on high-index substrates via molecular beam epitaxy, providing a lithography-free route toward scalable coupled-wire architectures. The demonstrated field-tunable confinement opens new possibilities for programmable optoelectronic platforms, enabling charge-selective transport, sensing, and reconfigurable nanophotonic architectures, and highlights new pathways for the integration of III-V nanostructures into quantum and optoelectronic device technologies.