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Trapped Ion Quantum Computing

Wafer-scale integration of single nanodiamonds via electrostatic-trapping.

PubMed
Authors: Jing J, Wang Y, Wang Z, Luo Y, Ma L, Zhang T, Song C, Li J, Li KH, Ki DK, Kim JT, Chu Z

Year

2026

Paper ID

10134

Status

Peer-reviewed

Abstract Read

~2 min

Abstract Words

148

Citations

0

Abstract

Nanodiamonds (NDs) are key materials for building nanoscale quantum sensing, imaging and communication devices. Scalable configuration of single NDs on heterogeneous platforms, forming quantum emitter arrays, will be an essential solution towards realizing next-generation scalable quantum devices. However, NDs are challenging to manipulate because their size, shape and surface chemistry vary substantially. Here, we show a simple method based on electrostatic-trapping to rapidly and reliably pattern single ND arrays on arbitrary substrates at scale. Our method, which uses carefully engineered microscale hole templates and electrostatic force, captures single NDs across 8-inch wafers with 82.5% yields within 5 min. Systematic experimental and theoretical studies show the number of deposited NDs primarily depends on the diameter of the hole trap. The method is compatible with mature CMOS technologies, enabling the mass production of scalable and integrable quantum devices. This advancement is expected to accelerate the commercialization and industrial adoption of ND-based technologies.

Why This Paper Matters

  • This paper contributes to the Trapped-Ion Quantum Computing research area in the Quantum Articles archive.
  • It adds a 2026 reference point for readers tracking recent quantum research.
  • Nanodiamonds (NDs) are key materials for building nanoscale quantum sensing, imaging and communication devices.

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External citation index: OpenAlex citation signal • updated 2026-06-12 17:07:46

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