Compare Papers
Paper 1
High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit.
Harty TP, Allcock DT, Ballance CJ, Guidoni L, Janacek HA, Linke NM, Stacey DN, Lucas DM.
- Year
- 2014
- Journal
- Phys Rev Lett
- DOI
- 10.1103/physrevlett.113.220501
- arXiv
- -
No abstract.
Open paperPaper 2
Inelastic backaction due to quantum point contact charge fluctuations.
Young CE, Clerk AA.
- Year
- 2010
- Journal
- Phys Rev Lett
- DOI
- 10.1103/physrevlett.104.186803
- arXiv
- -
No abstract.
Open paper